Abstract
A quantitative treatment of nonequilibrium dopant incorporation during the growth by conventional liquid phase epitaxy (LPE) as well as by electroepitaxy has been put forward. Analytical expression for the stationary distribution of dopant concentration and potential in the solid near the liquid metal-semiconductor interface is derived. On this basis the effect of the Schottky barrier height, supplied voltage, diffusion coefficient in the solid, and growth rate on the incorporation of the donor impurities is calculated. The experimental verification of the proposed model can be easily carried out as all the dependences are plotted versus normalized variables.
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