Diffusion coefficient and differential mobility of As in In for LPE and current controlled LPE

Abstract

InAs has been grown on undoped InAs substrates by liquid phase epitaxy (LPE) and current controlled LPE (CCLPE) in the temperature range of 570 to 670°C. From the LPE growth rate versus temperature results, the diffusion coefficient of As in In was calculated to be D = 525exp[ -(1.4 × 10 4) T ] cm 2 with an activation energy for diffusion of 1.2 eV (27.8 kcal/mol). CCLPE growth results indicated a linear relationship between the growth rate of InAs and the current density. The differential mobility of As in In was computed as μ = 0.9 × 10 -2 cm 2/ V· s at 620°C.