Abstract
The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been employed for the first time to grow lattice matched In 1 - x Ga x As y P 1 - y quaternary layers with composition in the range of 0 < x < 0.47 on (100) InP substrates at a constant furnace temperature of 650°C. The growth results showed a linear relationship between the growth rate of the epilayer and current density (up to 15 A/cm 2). The growth rate varied from 0.62 μm/min for In 0.53Ga 0.47As to 0.03–0.05 μm/min for quaternary layers corresponding to a wavelength of ≌ 1.3 μm, at a current density of 10 A/cm 2. X-ray diffraction measurements showed good lattice match between the epilayer and the substrate. The experimental data are compared with the derived numerical results based on the existing model.
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