Abstract
Abstract : The primary objective of this study was to determine the optimum growth parameters for preparing uniform epitaxial crystalline layers of InAs, InSb, InAsSb and Si using the current controlled liquid phase epitaxy (CCLPE) technique. The original objective was later altered and the effort concentrated on the growth of InAs and Si by CCLPE. (Author)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
