Abstract
A secondary ion mass spectrometry analysis of As, B, and P diffusion across the TaSi2/Si interface into mono‐ and polycrystalline Si was carried out together with an electrical characterization of the resulting structures. In the temperature range 900≤T≤1000 °C, all three types of dopants readily diffused into Si without drastic segregation effects when appropriate interface cleaning was applied. This phenomenon implies a variety of applications in IC technology. In particular, very shallow diffusion regions were obtained in the mono Si underneath the implanted TaSi2 for As as well as for B and P, even at relatively long annealing times sometimes needed for subsequent process steps.
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