Abstract
In this work we investigate the effect of stress-annealing on the magnetic properties and domain wall dynamics of CoFeNi-based microwires with nearly-zero magnetostriction. Among the annealing parameters whose influence we studied are time and temperature, as well as the magnitude of the stresses applied during annealing. We demonstrate that heat treatment and stress application have the opposite effects on the switching field and domain wall mobility. Therefore, their combination can be used to tune the parameters of the domain wall dynamics over the wide range. We found that stress annealing can increase the domain wall mobility by up to 3 times comparing to annealing without any stress. The maximum domain wall mobility achieved for the studied microwire is 95 m2/sA.
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