Domain Wall Dynamics in Amorphous Microwires

Abstract

Here we present the domain wall dynamics in FeNi-based microwires with positive magnetostriction. Two different ranges were found which differs by the measured domain wall mobility. At low fields, the domain wall dynamics exhibit small mobility, whereas at higher field the domain wall mobility increases. The difference in the two regimes of the domain wall dynamics is treated in terms of the different domain wall structure. At low fields, the transversal domain wall is expected, with low domain wall mobility. At high field, the vortex-type domain wall with high domain wall mobility is created.