Abstract
AbstractDLTS was applied to p—type polycrystalline silicon, grown by a casting technique to form ingots with a nominal doping level of ∼1016 acceptors/cmg. Both Schottky diodes and n+p mesa structures were used for the measurements. Very complex DLTS spectra were obtained from diodes that contained electrically active grain boundaries, whereas no traps were detected in areas that did not contain electrically active grain boundaries. Several electron and hole traps were resolved.
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