Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

T Hayashi H Tanaka

doi:10.1109/ispsd.2005.1488007

Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

T Hayashi H Tanaka

https://doi.org/10.1109/ispsd.2005.1488007

Copy DOI

Publication Date: May 23, 2005

Citations: 17

#Type Polycrystalline Silicon #Heterojunction Diode + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

We demonstrate a heterojunction diode (HJD) fabricated with p + -type polycrystalline silicon on an n - -type epitaxial layer of 4H-SiC. The HJD achieved extremely low Von and high reverse blocking voltage compared with a SiC Schottky barrier diode (SBD). The HJD shows good diode characteristics for temperatures ranging up to 200°C. Measured switching characteristics of the HJD exhibit almost zero reverse recovery similar to that of the SBD.

Full Text