Abstract
Deep level transient spectroscopy (DLTS) and scanning electron microscope-electron beam induced current techniques were used to study recombination in p-type polycrystalline silicon, grown by a casting technique to form ingots with a nominal doping level of 1016 acceptors/cm3. Both Schottky diodes and n+p mesa structures were used for the measurements. In general, very complex DLTS spectra were obtained, and several hole and electron traps were identified. It was found that the hole traps were grain-boundary related. By contrast, the electron traps were found to exist in all regions of the ingot, they were more concentrated in areas near the crucible and at the bottom of the ingot, and they appeared to be growth related.
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