Abstract
The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12eV and capture cross section of 8.0×10–16cm2 was induced by the exposure. The defect was similar to defects induced by other irradiation techniques such as proton, electron, and gamma irradiation. In comparison to GaN, the EBE induced defects in other materials such as Si and SiC are similar to those induced by other irradiation methods.
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