Abstract
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition (MOCVD). In DLTS technique, different reverse bias and different heights and widths of the filling pulse are applied to the samples; the measurements have revealed the presence of four defects labelled A–D, which are found to be in a good agreement with the results of the photoluminescence (PL) technique. In fact, a detailed study of the defect (D) by photoluminescence (PL) technique has led to the same results as those determined by DLTS.
Published Version
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