Abstract
InxAl1-xN lattice-matched to GaN with recording crystal quality have been grown on AlN/sapphire template by metal organic chemical vapor deposition. The width at half maximums (FWHMs) of X-ray diffraction (XRD) ω-rocking curves are as low as 100 arcsec for (0002) reflection and 248 arcsec for (1012) reflection, respectively. Deep level transient spectroscopy (DLTS) technique has been employed to investigate the deep traps in InAlN. Three deep traps were observed with activation energies of E1 = 0.351 ±0.018, E2 = 0.404 ±0.027, and E3 = 0.487 ±0.026 eV, respectively. The capture kinetic behaviors of E1 and E3 were investigated, and it is believed that E1 is associated with point defects while E3 is related to dislocations.
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