Abstract
Distribution of internal bias field Eb was investigated in an LATGS crystal grown from TGS solution containing 10 mol% L-α-alanine. As the crystal was of single domain, the field Eb was oriented in one definite direction all over the crystal. The intensity of Eb distributed over a wide range of 30 to 500 kV/m or more, and distinctly depended on the crystal growth sector. The distribution showed the polar symmetry 2, similarly to the crystal form of LATGS. Generally speaking, Eb in the -b side of the seed crystal was more intense than in the +b side. The spontaneous polarization and the coercive field did not show a significant distribution in the crystal.
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