Distorted Lattice Structure of La and Nd Co-Doped Bismuth Titanate Bi3-XTi4O12 Nano-Grained Ceramics for High Quality Energy Storage Application

Abstract

Capacitive energy storage technology becomes more popular due to the fast charging facilities. Bismuth titanate (BIT) is a lead-free ferroelectric material used as a dielectric medium in the capacitive energy storage system. La and Nd co-doped BIT has been synthesized through a solid-state reaction process to obtain improved dielectric properties. Various characterization technologies such as Fourier Transform Infrared (FTIR) and X ray diffraction (XRD) have been done to sure the reaction completion and absence of the impurity phase of BIT. Rietveld refinement of XRD has been carried out to investigate the crystal structural properties of La and Nd-doped BIT. Capacitive energy storage performances have been tested by measuring the parallel plate capacitance and quality factor of BIT ceramics. Co-doped BIT possesses the highest crystal density, which results in a high Q factor. The unit cell of the TiO6 octahedral of BIT becomes highly distorted as a consequence of La and Nd co-doping, which increases surface polarization, and the capacitance of BIT increases.