Abstract
A good understanding about the properties of La/Nd doped Bismuth Titanate (BIT) ceramics at high temperature is very important as the new materials being developed based on the BIT. Pure BIT, La doped (BLT), Nd doped (BNT) and La and Nd co-doped BIT (BLNT) powders were synthesized by solid state reaction method. Prepared powders were calcined at different temperatures and structural properties measured by XRD. For pure BIT better crystal quality was obtained at 750 0C and for both BLT and BNT better result obtained at 800 0C. Calcined powders were formed into pellets and sintered at different temperatures and its dielectric properties were characterized. Optimum sintering temperature for both BLT and BNT showed was 850 0C and La and Nd co-doped bismuth titanate (BLNT) revealed optimum sintering temperature of 950 0C. Therefore, optimum sintering temperature of bismuth titanate was increased due to La and Nd doping.
Highlights
Bismuth Titanate (Bi4Ti3O12) (BIT) is an attractive material for their lead free character with high curie temperature, high dielectric constant, high remnant polarization, excellent piezoelectric and electro-optical properties, relatively low possessing temperature and high breakdown strength and have become a potential candidates for the piezoelectric applications, Non volatile memory storage, and optical displays[1,2]
BIT suffers from not enough remnant polarization(2Pr), high coercive field (2Ec) and high leakage current and domain pinning due to defects such as Bi vacancies accompanied by oxygen vacancies which is an obstacle for industrial applications
Pure BIT, La doped BIT (BLT) [Bi3.25La0.75Ti3O12], Nd doped BIT (BNT) [Bi3.15Nd0.85Ti3O12] and, La and Nd co-doped BIT [Bi3(LaxNd1-x)Ti3O12] (BLNT x = 0.5) samples were prepared by solid-state reaction with the starting materials, bismuth oxide (Bi2O3), Titanium oxide (TiO2), Lanthanum oxide (La2O3) and Neodymium oxide (Nd2O3)
Summary
Bismuth Titanate (Bi4Ti3O12) (BIT) is an attractive material for their lead free character with high curie temperature, high dielectric constant, high remnant polarization, excellent piezoelectric and electro-optical properties, relatively low possessing temperature and high breakdown strength and have become a potential candidates for the piezoelectric applications (transducers and actuators, ultrasonic devices, medical imaging detectors), Non volatile memory storage, and optical displays[1,2]. It is well known that, ion doping by suitable cations (La, Nd, Pr etc.) is a best approach for the improvement of ferroelectric performance of BIT [3,4,5,6]. Among these cations, lanthanide elements, Nd [r(Nd3+)=1.27Å] and La [r(La3+)=1.36Å] have been recognized as the materials to substitute Bi [r(Bi3+)=1.40Å] in the A-site of perovskite structure. La-substituted BIT having composition of (Bi3.15La0.75Ti3O12) (BLT) is regarded as one of
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