Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching

Abstract

Static characterisation and fast switching processes of lateral β-Ga2O3 metal oxide semiconductor field-effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm gate width and 6 µm gate drain distance achieve on-state resistances of 5 Ω and saturation currents above 2.4 A. Hard switching in a double pulse test setup with an inductive load results in voltage slopes up to 65 V/ns at 300 V input voltage. After longer blocking times and higher DC voltages, a strong dynamic increase in on-state resistance occurs. Switching with an ohmic load and different load currents reveals only minor influence of the hot electron mechanism during the hard turn on. However, a clear influence of the turn-on gate drive voltage on the dynamic increase is observed, indicating a shift of the transfer characteristic due to charge trapping in the gate region.