Abstract
The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5×10 20 cm −3 is investigated by the etch-pit technique, in comparison with that of O impurity in Si. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1×10 19 cm −3, originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement.
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