Abstract
Dynamic interaction between dislocations and impurities in Si is investigated by using X-ray topography and the etch-pit technique from the viewpoint of Czochralski growth of Si crystals. Dislocation generation is effectively suppressed by doping of B and co-doping of B and Ge, which is originating in the immobilization of dislocations by preferential segregation of impurities. Dislocation velocity in motion is enhanced by increasing the concentration in B impurities. Change of the lattice parameter due to the impurity doping leads to the generation of misfit dislocations at the seed/crystal interface.
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