Dislocation curvature by kink migration in a non-uniform stress field application to dislocation loops in silicon

Abstract

Abstract The radius of curvature of dislocations in the thermally activated regime of glide, and in a non-uniform stress field, is derived from two characteristic times related to kink velocity. The result is compared to experimental values of the radius of curvature at the corner of stress-induced dislocation loops in silicon.