Abstract
Interfacial disconnections due to substrate steps are studied for the III-N/Si (0001)/(111) epitaxial system. Such coherency defects can delineate distinct interfacial structures. In addition, they can be pertinent to the emanation of inversion domain boundaries (IDBs) since, at certain instances, the IDB introduction may be favoured by the reduction of the Burgers vector of an associated disconnection. Emanating IDBs accommodate distinct interfacial structures. HRTEM observations show disconnections between distinct interfacial structures and IDBs associated with such defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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