Abstract
AbstractThe role of substrate steps in the introduction of transformations of interfacial structure and inversion domain boundaries is studied for the GaN/AlN/Si (0001)/(111) epitaxial system using topological analysis and high resolution transmission electron microscopy. This epitaxial system can exhibit distinct interfacial structures at the AlN/Si interface, and transformations from one to the other can be introduced by the steps on the substrate surface. The interfacial steps can exhibit dislocation character and they may accommodate the coexistence of energetically degenerate as well as distinct interfacial structures. A substrate step is identified as a potential cause for pinhole formation. Inversion domain boundaries accommodate interfacial transformations when they emanate from the epitaxial interface and can reduce the coherency dislocation character of interfacial steps. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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