Abstract
Thin films of copper (I) bromide deposited by Physical Vapor Deposition (PVD) were investigated for their potential application as inorganic hole transport layer in perovskite solar cells with standard architecture. The CuBr layers with different thicknesses were prepared on monocrystalline silicon substrates or on quartz plates for optical investigations. Ellipsometric characterization, performed for the layers deposited on mono silicon have given a thickness about 330–370 nm with Rout Mean Square (RMS) roughness near 10 nm. The optical spectra of the films have shown more than 80% transparency in the visible range and estimated band gap of as deposited CuBr layers were about 2.98 eV with a split off band above the valence band edge, observed for all samples. In the sandwich structure with In:SnO2 (ITO) covered soda lime glass substrates – ITO/CuBr/Cu the volt – amperometric characteristics are linear indicating formation of ohmic contact with the copper top electrode.
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