Abstract
We report on the direct patterning of high-quality structures incorporating the LaAlO3-SrTiO3 interface by an epitaxial-liftoff technique avoiding any reactive ion beam etching. Detailed studies of temperature dependent magnetotransport properties were performed on the patterned heterostructures with variable thickness of the LaAlO3 layer and compared to their unstructured thin film analogues. The results demonstrate the conservation of the high-quality interface properties in the patterned structures enabling future studies of low-dimensional confinement on high mobility interface conductivity as well as interface magnetism.
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