Abstract

The interface magnetoelectric (ME) effect is promising for novel technological applications as it allows the control of interface magnetization at heterointerfaces by the external electric field. Here in this article, we explore the interface ME effect and its sensitivity on interface atomic structure and bonding in ferromagnetic-ferroelectric oxide hetrostructures within the framework of density functional theory. In particular, we consider Fe/AgNbO3 and SrRuO3/AgNbO3 superlattices with different possible defect-free interfaces. Our results suggest that interface magnetization and thereby interface ME effect can critically depend on interface structure. The interface magnetization is found to depend on atomic bondings which are sensitive to atomic displacements at the interface. This leads to ME coupling due to induced change in the interface magnetization as the electric polarization is reversed in the ferroelectric film. In addition, the contribution to interface ME coupling also comes from the change in exchange-splitting between spin-polarized electrons and consequently change in the interface magnetic moments due to ferroelectric polarization reversal. The change in exchange splitting, in turn, is caused by spin-dependent screening of the bound polarization charges at the interface. In Fe/AgNbO3 system, the interface ME coefficient is found to exhibit opposing trend for Fe|AgO and Fe|NbO2 interfaces. In addition to interface ME effect, the formation of ferroelectric interface domain wall (IDW) in these systems is also explored. The IDW is found to form only in SrRuO3/AgNbO3 system with SrO|NbO2 interface due to oppositely oriented strong dipole moments at the two interfaces. The strong dependence of interface ME effect on interface atomic structure may have implication for its experimental observation in oxide heterostructures. In particular, the interface defects may render the conclusive observation of this phenomenon challenging due to resulting fluctuations in the observed data.

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