Abstract
AbstractBy using ultrahigh vacuum scanning electron microscopy (UHV‐SEM) combined with characteristic x‐ray spectroscopy under a grazing detection‐angle condition, the behaviours of elements on surfaces and at interfaces during the growth of Ga on an Si(111)‐√3 × √3‐Ag surface and of Au on Si(111)‐√3 × √3‐Ag were studied. Site exchange and other surrounding elements were observed directly. When a 2/3 monolayer of Ga was deposited, Ag was substituted by Ga and dissociated from the √3 × √3‐Ag structure, resulting in the formation of Ag particles 10–20 nm in size. During further Ga deposition, Ga surrounded the Ag particles. Substitution of Ag by Au also was observed during the growth of Au. Compared with the resolution of conventional SEM energy‐dispersive x‐ray spectrometry (EDX), which is several micrometres, resolution in elementary analysis has been improved significantly due to a small beam size and cut‐off of x‐rays from deep regions. Using the present method, local elementary analysis of surface structures of only ∼5 nm in size is possible. Copyright © 2003 John Wiley & Sons, Ltd.
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