Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface

Abstract

The energy distribution of the interface states at the SiO2/4H-SiC(0001) interface was obtained using operando photoelectron spectroscopy. For the interface states, sharp and high density interface states were observed near the conduction band minimum and uniform interface states were present in the entire SiC band-gap. The uniform interface states observed in the whole gap were attributed to graphitic carbon clusters at the interface although the sharp interface states could not be assigned currently.