オペランド硬X線光電子分光法によるSiO<sub>2</sub>/4H-SiC界面の界面準位のエネルギー分布観測

Abstract

The energy distribution of the interface states at the SiO2/4H-SiC(0001) interface was obtained using operando hard x-ray photoelectron spectroscopy. For the energy distribution, two components exsisted. The sharp and high density interface states were observed near the conduction band minimum (CBM) while uniform interface states were present in the entire SiC band-gap. The uniform interface states in the whole gap were assigned to graphitic carbon clusters at the interface while the sharp interface states near CBM could not be clarified in the present study.