Abstract
Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications
Highlights
Graphene is a promising material for sensing applications owing to its extremely high carrier mobility, exceptional surface-to-volume ratio, and low contact resistance
We investigated how microwave annealing (MWA) improved the electrical properties of epitaxial graphene field-effect transistors (EG-FETs) with solution-based Al2O3 gate dielectrics
We demonstrated that the formation of a damage-free, high-quality Al2O3 dielectric layer is possible on epitaxial graphene (EG) by using a solution-based coating combined with MWA
Summary
Graphene is a promising material for sensing applications owing to its extremely high carrier mobility, exceptional surface-to-volume ratio, and low contact resistance. Among various graphene formation methods, that of epitaxial graphene (EG) proceeds via the sublimation of Si atoms from the surface of SiC substrates and provides a practical technology in that it enables a uniform formation of monolayer graphene over a large area and requires no transferring process onto insulating substrates for the fabrication of devices.[1,2,3]. Sensors and Materials, Vol 31, No 7 (2019) In this process, thermal annealing at temperatures above 400 °C is required to eliminate the solvent and absorb the moisture from air to oxidize the metal precursor. Because of the dielectric heating of the substrate, MWA generates heat from inside of the substrate This unique heating property allows extremely high heating efficiencies, ramp rates, and in-plane uniformities,(11,12) which contribute to the minimization of the annealing time and the suppression of the generation of hole doping in graphene
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