Abstract
Channeling and blocking effects of electrons and positrons emitted from ion-implanted radioactive In dopants in silicon have been utilized for lattice location of In in parts-per-million concentrations. A majority of In atoms occupies substitutional sites after implantation at room temperature. Defect recovery, which is observed after annealing at 700 K, increases the channeling effects. These results corroborate conclusions from previous M\"ossbauer studies on the same system under identical implantation conditions. The nature of the damage cascades of the individual implanted impurity probe atoms is discussed.
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