Abstract
We report on the direct epitaxial growth of submicron-patterned SiC structures on Si(001) substrates using supersonic molecular jet epitaxy and resistless e-beam lithography. Prior to SiC film growth, an electron beam was scanned on hydrogen-passivated Si substrates in order to produce silicon oxide lines with widths ⩾60 nm. The SiC nucleation and growth rates were significantly reduced on the oxidized regions during the subsequent supersonic jet epitaxial growth of SiC, which yielded epitaxial, submicron-patterned SiC films. The effects of the growth temperature and e-beam dose on the SiC growth and pattern linewidth are discussed.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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