3CSiC growth by alternate supply of SiH 2Cl 2 and C 2H 2

Abstract

We have attempted to grow heteroepitaxial 3CSiC films on Si(0 0 1) substrates with high productivity by a hot-wall type low pressure chemical vapor deposition (LPCVD) using an alternate supply of acetylene (C 2H 2) and dichlorosilane (SiH 2Cl 2) into a reaction tube. In order to realize a high quality and large area single crystalline SiC formation, we have inquired into the desorption behavior of C 2H 2 molecules in the SiC growth process. We suggested that a layer-by-layer SiC growth which was realized by a self-limiting adsorption of Si species (SiCl 2 molecules) was brought about by a decrease in adsorbed C 2H 2 molecules on the surface. The growth of single crystalline 3CSiC films on large area Si(0 0 1) substrates was realized by the self-limiting adsorption of SiCl 2 molecules at 1020°C. The thickness deviation of grown SiC film along the wafer diameter calculated as three times standard deviation divided by an average value was less than 1.5% over the 6 inch diameter.