Abstract
In this work, Bismuth (III) iodide (BiI3) thick film-based direct conversion X-ray sensor was fabricated for low-dose (mGy) X-ray detection since it exhibits high attenuation against 70 keV X-ray photon energy that is about 4.70 cm2/g. Prior to the device fabrication, commercial BiI3 powder was characterized for their phase, morphology, and optical properties. Nanocrystalline BiI3 film with ~211 µm thickness was coated on wet-etch-derived interdigitated electrode by the glass rod sliding technique using Poly(vinylidene fluoride co-hexafluoropropylene) as a binder. The photocurrent induced under the illumination of X-ray was measured for four different doses 7.97, 5.05, 2.56, and 1.28 mGy, then the observed photocurrent characteristics were applied to estimate sensitivity of the device and it was found to be 0.053, 0.045, 0.037, and 0.030 nC/mGy cm3, respectively. The response rate of our sensor was found to be linear with the exposed X-ray doses and it offers the applicability of BiI3 thick film in the direct conversion X-ray sensor fabrication for real-time applications.
Published Version
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