Abstract
Atomic-resolution Z-contrast imaging and electron energy loss spectroscopy combined with energy dispersive x-ray spectroscopy are used to investigate the structure-property relationships in an ideal metal–oxide–semiconductor device structure. Arsenic segregation with a very narrow profile occurring precisely at the silicide/Si interface was identified. Images show that the As is substitutional on the Si lattice sites, implying that it remains electrically active. These structural results imply desirable electronic properties for the device and are consistent with electrical measurements showing a decrease in contact resistance for these samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
