Abstract

This paper reports on the use of new DNA-based biopolymers as the semiconducting layer in field effect transistors. Thin-film field effect transistor (FET) structures are fabricated with two different DNA-biopolymers as semiconductor layers, and two different field effect transistor structures are studied. Current voltage characteristics of the FETs show that the devices are operating in depletion mode.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.