Diffusion of Ag implanted into the AZ1350 photoresist

Abstract

In the present work we report Ag diffusion results in the photoresist AZ1350. We have implanted Ag into AZ1350 films at very low energy ( E=30 keV) and increasing fluences, Φ=10 12 at/cm 2, 5×10 12 and 5×10 13 Ag/cm 2. Annealing was performed in the 150–270 °C temperature range and the as-implanted and diffused depth profiles were analyzed using the Rutherford backscattering technique. For the lowest implantation fluence the results show a regular atomic diffusion characterized by an activation energy of E a=650 meV. This feature shows that in this particular case we have minimized the radiation damage introduced by the implantation process and avoided the cluster formation. Instead for Φ=5×10 12 Au/cm 2 it is already possible to observe the effects of the radiation damage on the diffusion process. However even for the highest implanted fluence no evidence of cluster formation and diffusion is observed.