Anomalous depth profiles and diffusional behavior of noble gases implanted into photoresist films

Abstract

In the present work are reported results of thermal diffusion of Kr implanted into AZ1350 positive photoresist films and Xe implanted into “waycoat” negative photoresist films. Kr and Xe ions were implanted at 80 K and the depth profiles determined “in situ” by using the Rutherford backscattering technique in a 80–273 K temperature range. The extracted Kr diffusion coefficients follow a linear Arrhenius plot over the studied temperature range with a characteristic activation energy of E b = 100 meV. The Xe diffusion into the “waycoat” photoresist develops in a very narrow temperature range (210–230 K) which only allows determination of the diffusion coefficient at 230 K. Comparison between the present and previous published results show that Kr and Xe display very similar diffusional characteristics when implanted in the AZ1350 photoresist. On the other side, the diffusion into the “waycoat” photoresist seems to be much faster than in the AZ1350 film.