Diffusion of Bi, Er and Eu implanted into S1813 photoresist

Abstract

We report on the diffusion of Bi, Er and Eu in the photoresist S1813. The implantation of Bi into the resist at low energies ( E=20 keV) and fluences ( Φ=10 12 cm −2) allowed us to minimize both radiation damage and cluster formation. The impurity redistribution in the samples annealed between 100 and 300 °C was determined using the Rutherford backscattering technique. The results for Bi indicate regular thermal diffusion with an activation energy of E a=680 meV. At higher fluences, the trapping in radiation-induced defects influence the migration behavior. However, the activation energy is hardly influenced (650 meV for implanted Bi at 5 × 10 12 cm −2). Both the lanthanides Er and Eu implanted into the resist at fluences of 5 × 10 12 and 10 13 at/cm 2 show quite a similar behavior as Bi implanted at the highest fluence with similar values for the activation energy ( E a(Eu)=525 meV and E a(Er)=530 meV).