Abstract
Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epitaxial NiSi2 nuclei at separate spots of NiSi/Si(001) interface; regular growth of NiSi2 phase inclusions at the expense of NiSi layer “diffusion dissolution”; a formation of NiSi2 spherical inclusions in the lattice of Si matrix and their coalescence.
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