Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

Abstract

Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth method using a molecular beam epitaxy (MBE). The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions including growth temperature and V/III flux ratio. Growths of GaAslang001rang as well as GaAslang111rang nanowires were observed by transmission electron microscopy and scanning electron microscopy. Epitaxially grown GaAslang111rang nanowires on a Si(111) substrate were verified through x-ray diffraction out-of-plane 2thetas/omega-scans. A strong room-temperature photoluminescence (PL) was observed from the epitaxially grown GaAslang111rang nanowires on a Si(100) substrate. Results of low-temperature (10 K) PL measurements and current-sensing atomic force microscopy indicated that the GaAs nanowires on a Si substrate were unintentionally doped with Si