Molecular Beam Epitaxy of GaAs Nanowires on Si Substrates

Abstract

Au-catalyzed GaAs nanowires were epitaxially grown on Si substrates by vapor-liquid-solid growth with the molecular beam epitaxy (MBE) method. The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions such as growth temperature and V-III flux ratio. Growths of GaAs〈001〉 as well as GaAs〈111〉 nanowires were observed by transmission electron microscopy and scanning electron microscopy. Well-aligned GaAs〈111〉 nanowires on a Si