Abstract
Au-catalyzed GaAs nanowires were epitaxially grown on Si substrates by vapor-liquid-solid growth with the molecular beam epitaxy (MBE) method. The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions such as growth temperature and V-III flux ratio. Growths of GaAs〈001〉 as well as GaAs〈111〉 nanowires were observed by transmission electron microscopy and scanning electron microscopy. Well-aligned GaAs〈111〉 nanowires on a Si
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have