Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

Abstract

The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m- plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m- plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.