Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi‐Layer MoS2 Growth

Abstract

Abstract2D MoS2 has gained attention for the post‐silicon material owing to its atomically thin nature and dangling bond‐free surface. The bi‐layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi‐layer MoS2 is still challenging. Herein, the uniform growth of bi‐layer MoS2 is demonstrated using gas‐phase alkali metal‐assisted metal–organic chemical vapor deposition (GAA‐MOCVD). Thanks to enhanced metal reactant diffusion length in GAA‐MOCVD, the uniform growth of bi‐layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi‐layer MoS2 field‐effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi‐layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm2 V−1 s−1. Using the partially grown epitaxial bi‐layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near‐infrared photoresponse with a low dark current that is advantageous for both monolayer and bi‐layer applications. The potential expansion of the growth technique to layer‐by‐layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2.