Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors

Abstract

Field‐effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS2) have shown promising potential as a candidate of next‐generation nanoelectronic devices. The first first‐principles quantum transport investigation of the ballistic performance upper limit of sub‐10 nm ML MoS2 FETs with Ti electrode is provided. An extraordinary small subthreshold swing is obtained by taking advantage of a dual gate (DG) configuration. The ballistic performance upper limits of the sub‐10 nm ML MoS2 DGFETs are comparable with the best existing sub‐10 nm advanced silicon FETs. The 10 nm ML MoS2 DGFET can satisfy 35% and 54% requirement of the on‐state current of high performance and low power FETs of the next decade in the International Technology Roadmap for Semiconductors 2013, respectively.