Abstract
The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression DFe=3.3×10-1 exp(-0.81/kT)cm2s-1.
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