Abstract
We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_yNy/GaAs quantum well structures was determined and analyzed. A 10‐band k_p Hamiltonian matrix was used in the calculations and solved self‐consistently with Poisson′s equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.
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