Abstract
AbstractThe differential gain and linewidth enhancement factor (α ‐factor) of a new material system InGaAsN/GaAs is studied using the 10‐band k · p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of the Schrödinger and Poisson equations is applied. It is shown that spectra of differential gain and α ‐factor have significant variation versus nitrogen composition and carrier density. The determined parameters and their variations play important role in designing practical structures based on InGaAsN/GaAs material system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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