Abstract
A differential distributed amplifier integrated with a 2:1 selector has been designed and fabricated in a 0.7 ?m InP double hetero-junction bipolar transistor (DHBT) technology. Measurements were performed at 86 and 100 Gbit/s, showing clear output eye opening and a voltage swing of 2 × 2.3 V. The circuit is well suited to dual-drive electro-optical modulators for 100-Gbaud-based optical communications systems.
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