Abstract
Two 32times6-bit read only memory (ROM) circuits, employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), have been designed in InP double heterojunction bipolar transistor (DHBT) technology. These ROM designs use a -3.8 V power supply and dissipate 1.95 W and 7.07 W of power respectively. The maximum operating clock frequencies for these designs are simulated to be 20 GHz and 46 GHz respectively.
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