Abstract
A cyclic MOCVD TiN deposition process of alternating deposition and plasma treatment steps was modified to deposit Si stabilized TiN barriers for copper metallisation schemes. SiH 4 plasma or soak treatments were introduced at different points in the multistep process. In case of the SiH 4 plasma treatments, the film thickness was drastically increased because of the deposition of Si interlayers. Furthermore, no densification effect of the TiN pyrolysis layer is detected for the SiH 4 plasma treatment, compared to the H 2/N 2 plasma. The influence of the presence of Si to the following deposition cycle is evident. Only the silane soak led to moderate thickness and resistivity increase compared to the TiN films.
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